Infineon OptiMOS™ 2 N-Channel MOSFET, 1.4 A, 20 V, 3-Pin SOT-323 BSS816NWH6327XTSA1

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Subtotal (1 reel of 3000 units)*

£126.00

(exc. VAT)

£150.00

(inc. VAT)

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3000 - 3000£0.042£126.00
6000 - 12000£0.04£120.00
15000 +£0.037£111.00

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RS Stock No.:
166-0980
Mfr. Part No.:
BSS816NWH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

20 V

Series

OptiMOS™ 2

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.75V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

0.6 nC @ 2.5 V

Length

2mm

Height

0.8mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.1V

COO (Country of Origin):
MY

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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