Infineon OptiMOS™ 2 N-Channel MOSFET, 1.4 A, 30 V, 3-Pin SOT-23 BSS316NH6327XTSA1
- RS Stock No.:
- 826-9412
- Mfr. Part No.:
- BSS316NH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 250 units)*
£29.50
(exc. VAT)
£35.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 750 unit(s) shipping from 27 October 2025
- Plus 7,000 unit(s) shipping from 03 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 250 - 250 | £0.118 | £29.50 |
| 500 - 1000 | £0.112 | £28.00 |
| 1250 - 2250 | £0.079 | £19.75 |
| 2500 + | £0.075 | £18.75 |
*price indicative
- RS Stock No.:
- 826-9412
- Mfr. Part No.:
- BSS316NH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS™ 2 | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 280 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 2.9mm | |
| Typical Gate Charge @ Vgs | 0.6 nC @ 5 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 1.3mm | |
| Height | 0.9mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.4 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ 2 | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 2.9mm | ||
Typical Gate Charge @ Vgs 0.6 nC @ 5 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 1.3mm | ||
Height 0.9mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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