Infineon OptiMOS™ 2 N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1
- RS Stock No.:
- 145-9547
- Mfr. Part No.:
- BSS205NH6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£231.00
(exc. VAT)
£276.00
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 3,000 unit(s) shipping from 27 October 2025
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.077 | £231.00 |
| 6000 - 6000 | £0.073 | £219.00 |
| 9000 + | £0.069 | £207.00 |
*price indicative
- RS Stock No.:
- 145-9547
- Mfr. Part No.:
- BSS205NH6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Series | OptiMOS™ 2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 85 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Width | 0.1mm | |
| Typical Gate Charge @ Vgs | 2.1 nC @ 4.5 V | |
| Length | 2.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 1.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Series OptiMOS™ 2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 85 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 0.1mm | ||
Typical Gate Charge @ Vgs 2.1 nC @ 4.5 V | ||
Length 2.9mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 1.3mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™2 Power MOSFET Family
Infineon OptiMOS™ 2 Series MOSFET, 2.5A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS205NH6327XTSA1
Features & Benefits
• Maximum drain-source voltage of 20V
• Minimal Rds(on) of 85 mΩ enhances power efficiency
• Qualified to AEC-Q101 for automotive applications
Applications
• Suitable for DC-DC converters in electronic devices
• Employed in motor control for efficient switching
• Ideal for power amplification in RF
What kind of protection does this offer against voltage spikes?
What is the significance of the low Rds(on) in this device?
How can this be installed on a circuit board?
What are the typical switching characteristics at the rated voltage?
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