Infineon OptiMOS™ 2 N-Channel MOSFET, 27 A, 100 V, 3-Pin DPAK IPD33CN10NGATMA1

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Subtotal (1 reel of 2500 units)*

£755.00

(exc. VAT)

£905.00

(inc. VAT)

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  • Plus 999,987,500 unit(s) shipping from 16 February 2026
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Units
Per unit
Per Reel*
2500 +£0.302£755.00

*price indicative

RS Stock No.:
215-2505
Mfr. Part No.:
IPD33CN10NGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

OptiMOS™ 2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.033 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

N-channel, normal level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free lead plating
Qualified according to JEDEC for target application
Ideal for high-frequency switching and synchronous rectification

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