Infineon OptiMOS™ 2 N-Channel MOSFET, 69 A, 100 V, 3-Pin TO-220 IPP12CN10LGXKSA1

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Packaging Options:
RS Stock No.:
892-2135
Mfr. Part No.:
IPP12CN10LGXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

OptiMOS™ 2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

58 nC @ 10 V

Length

10.36mm

Height

15.95mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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