Infineon OptiMOS™ 2 N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1
- RS Stock No.:
- 892-2374
- Mfr. Part No.:
- BSS205NH6327XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 100 units)*
£17.20
(exc. VAT)
£20.60
(inc. VAT)
FREE delivery for orders over £50.00
- 5,700 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
100 - 400 | £0.172 | £17.20 |
500 - 900 | £0.163 | £16.30 |
1000 - 2400 | £0.129 | £12.90 |
2500 - 4900 | £0.089 | £8.90 |
5000 + | £0.077 | £7.70 |
*price indicative
- RS Stock No.:
- 892-2374
- Mfr. Part No.:
- BSS205NH6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 2.5 A | |
Maximum Drain Source Voltage | 20 V | |
Series | OptiMOS™ 2 | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 85 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1.2V | |
Minimum Gate Threshold Voltage | 0.7V | |
Maximum Power Dissipation | 500 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Maximum Operating Temperature | +150 °C | |
Length | 2.9mm | |
Typical Gate Charge @ Vgs | 2.1 nC @ 4.5 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Width | 0.1mm | |
Forward Diode Voltage | 1.1V | |
Height | 1.3mm | |
Minimum Operating Temperature | -55 °C | |
Automotive Standard | AEC-Q101 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Series OptiMOS™ 2 | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 85 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Maximum Operating Temperature +150 °C | ||
Length 2.9mm | ||
Typical Gate Charge @ Vgs 2.1 nC @ 4.5 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 0.1mm | ||
Forward Diode Voltage 1.1V | ||
Height 1.3mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineon OptiMOS™ 2 Series MOSFET, 2.5A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS205NH6327XTSA1
Features & Benefits
• Maximum drain-source voltage of 20V
• Minimal Rds(on) of 85 mΩ enhances power efficiency
• Qualified to AEC-Q101 for automotive applications
Applications
• Suitable for DC-DC converters in electronic devices
• Employed in motor control for efficient switching
• Ideal for power amplification in RF
What kind of protection does this offer against voltage spikes?
What is the significance of the low Rds(on) in this device?
How can this be installed on a circuit board?
What are the typical switching characteristics at the rated voltage?
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