Infineon OptiMOS™ 2 N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 BSS806NH6327XTSA1

Subtotal (1 reel of 250 units)*

£31.00

(exc. VAT)

£37.25

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 4,250 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
250 +£0.124£31.00

*price indicative

RS Stock No.:
827-0096
Mfr. Part No.:
BSS806NH6327XTSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Series

OptiMOS™ 2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.75V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

1.7 nC @ 2.5 V

Length

2.9mm

Width

1.3mm

Transistor Material

Si

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1mm

Forward Diode Voltage

1.1V

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

Infineon OptiMOS™ 2 Series MOSFET, 2.3A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS806NH6327XTSA1


This MOSFET is tailored for efficient power management in various electronic applications, supporting a maximum continuous drain current of 2.3A and a maximum drain source voltage of 20V. Its low resistance features help to minimise energy losses, making it suitable for applications that require a high level of confidence under stringent conditions.

Features & Benefits


• N-channel configuration enhances switching performance
• Enhancement mode reduces off-state leakage
• Ultra logic level compatibility suitable for 1.8V applications
• Integrated avalanche rating improves robustness under stress
• AEC-Q101 qualified for automotive applications ensures long-lasting performance
• Surface mount design enables straightforward integration into compact circuitry

Applications


• Ideal for power management in automotive electronics
• Utilised for driving low-voltage loads in automation systems
• Suitable for switching in power supplies
• Designed for high temperature operating environments

Can it be used in automotive applications?


Yes, it is AEC-Q101 qualified, ensuring its suitability for automotive environments.

What is the operating temperature range?


The operating temperature range is between -55°C and +150°C.

How does its RDS(on) value impact circuit performance?


A low RDS(on) value reduces power loss during operation, enhancing overall efficiency.

What is the significance of its gate threshold voltage?


The gate threshold voltage indicates when the MOSFET begins conducting, which is vital for controlling switch timing.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links