Infineon OptiMOS™ 2 N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 BSS806NH6327XTSA1

RS Stock No.:: 827-0096
Mfr. Part No.:: BSS806NH6327XTSA1
Brand:: Infineon

Infineon OptiMOS™ 2 N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 BSS806NH6327XTSA1

Subtotal (1 reel of 250 units)*

£31.00

(exc. VAT)

£37.25

(inc. VAT)

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In Stock

4,000 unit(s) ready to ship

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Units	Per unit	Per Reel*
250 +	£0.124	£31.00

*price indicative

RS Stock No.:: 827-0096
Mfr. Part No.:: BSS806NH6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	2.3 A
	Maximum Drain Source Voltage	20 V
	Package Type	SOT-23
	Series	OptiMOS™ 2
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	82 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	0.75V
	Minimum Gate Threshold Voltage	0.3V
	Maximum Power Dissipation	500 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-8 V, +8 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Width	1.3mm
	Typical Gate Charge @ Vgs	1.7 nC @ 2.5 V
	Maximum Operating Temperature	+150 °C
	Length	2.9mm
	Minimum Operating Temperature	-55 °C
	Height	1mm
	Automotive Standard	AEC-Q101
	Forward Diode Voltage	1.1V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 2.3 A
	Maximum Drain Source Voltage 20 V
	Package Type SOT-23
	Series OptiMOS™ 2
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 82 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 0.75V
	Minimum Gate Threshold Voltage 0.3V
	Maximum Power Dissipation 500 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -8 V, +8 V
	Transistor Material Si
	Number of Elements per Chip 1
	Width 1.3mm
	Typical Gate Charge @ Vgs 1.7 nC @ 2.5 V
	Maximum Operating Temperature +150 °C
	Length 2.9mm
	Minimum Operating Temperature -55 °C
	Height 1mm
	Automotive Standard AEC-Q101
	Forward Diode Voltage 1.1V

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

Infineon OptiMOS™ 2 Series MOSFET, 2.3A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS806NH6327XTSA1

This MOSFET is tailored for efficient power management in various electronic applications, supporting a maximum continuous drain current of 2.3A and a maximum drain source voltage of 20V. Its low resistance features help to minimise energy losses, making it suitable for applications that require a high level of confidence under stringent conditions.

Features & Benefits

• N-channel configuration enhances switching performance
• Enhancement mode reduces off-state leakage
• Ultra logic level compatibility suitable for 1.8V applications
• Integrated avalanche rating improves robustness under stress
• AEC-Q101 qualified for automotive applications ensures long-lasting performance
• Surface mount design enables straightforward integration into compact circuitry

Applications

• Ideal for power management in automotive electronics
• Utilised for driving low-voltage loads in automation systems
• Suitable for switching in power supplies
• Designed for high temperature operating environments

Can it be used in automotive applications?

Yes, it is AEC-Q101 qualified, ensuring its suitability for automotive environments.

What is the operating temperature range?

The operating temperature range is between -55°C and +150°C.

How does its RDS(on) value impact circuit performance?

A low RDS(on) value reduces power loss during operation, enhancing overall efficiency.

What is the significance of its gate threshold voltage?

The gate threshold voltage indicates when the MOSFET begins conducting, which is vital for controlling switch timing.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.