Infineon OptiMOS™ 2 N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 BSS806NEH6327XTSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

20 V

Series

OptiMOS™ 2

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.75V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.7 nC @ 2.5 V

Length

2.9mm

Number of Elements per Chip

1

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C