Infineon OptiMOS™ 2 N-Channel MOSFET, 69 A, 100 V, 3-Pin TO-220 IPP12CN10LGXKSA1
- RS Stock No.:
- 145-8707
- Mfr. Part No.:
- IPP12CN10LGXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£52.25
(exc. VAT)
£62.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,750 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.045 | £52.25 |
| 100 - 200 | £0.846 | £42.30 |
| 250 - 450 | £0.821 | £41.05 |
| 500 - 950 | £0.80 | £40.00 |
| 1000 + | £0.78 | £39.00 |
*price indicative
- RS Stock No.:
- 145-8707
- Mfr. Part No.:
- IPP12CN10LGXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 69 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220 | |
| Series | OptiMOS™ 2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 15.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.36mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.57mm | |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 69 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series OptiMOS™ 2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Width 4.57mm | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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