Infineon OptiMOS™ 2 N-Channel MOSFET, 1.4 A, 20 V, 3-Pin SOT-323 BSS816NWH6327XTSA1
- RS Stock No.:
- 110-7113
- Mfr. Part No.:
- BSS816NWH6327XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 300 units)*
£15.90
(exc. VAT)
£19.20
(inc. VAT)
FREE delivery for orders over £50.00
- 32,700 unit(s) ready to ship
| Units | Per unit | Per Pack* | 
|---|---|---|
| 300 + | £0.053 | £15.90 | 
*price indicative
- RS Stock No.:
- 110-7113
- Mfr. Part No.:
- BSS816NWH6327XTSA1
- Brand:
- Infineon
| Select all | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.4 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-323 | |
| Series | OptiMOS™ 2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 240 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.75V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 1.25mm | |
| Typical Gate Charge @ Vgs | 0.6 nC @ 2.5 V | |
| Length | 2mm | |
| Minimum Operating Temperature | -40 °C | |
| Forward Diode Voltage | 1.1V | |
| Height | 0.8mm | |
| Select all | ||
|---|---|---|
| Brand Infineon | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 1.4 A | ||
| Maximum Drain Source Voltage 20 V | ||
| Package Type SOT-323 | ||
| Series OptiMOS™ 2 | ||
| Mounting Type Surface Mount | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 240 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 0.75V | ||
| Minimum Gate Threshold Voltage 0.3V | ||
| Maximum Power Dissipation 500 mW | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage -8 V, +8 V | ||
| Number of Elements per Chip 1 | ||
| Transistor Material Si | ||
| Maximum Operating Temperature +175 °C | ||
| Width 1.25mm | ||
| Typical Gate Charge @ Vgs 0.6 nC @ 2.5 V | ||
| Length 2mm | ||
| Minimum Operating Temperature -40 °C | ||
| Forward Diode Voltage 1.1V | ||
| Height 0.8mm | ||
Infineon OptiMOS™2 Power MOSFET Family
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