STMicroelectronics SCT1000N170 N-Channel MOSFET, 7 A, 1700 V, 3-Pin HiP247 SCT1000N170

Subtotal (1 tube of 30 units)*

£253.29

(exc. VAT)

£303.96

(inc. VAT)

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Units
Per unit
Per Tube*
30 +£8.443£253.29

*price indicative

RS Stock No.:
212-2091
Mfr. Part No.:
SCT1000N170
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

1700 V

Series

SCT1000N170

Package Type

HiP247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.66 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Number of Elements per Chip

1

Transistor Material

Si

SiC MOSFET


The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.

High speed switching performance
Very fast and robust intrinsic body diode
Low capacitances

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