Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 SIRC06DP-T1-GE3

Subtotal (1 pack of 25 units)*

£22.775

(exc. VAT)

£27.325

(inc. VAT)

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Per Pack*
25 +£0.911£22.78

*price indicative

Packaging Options:
RS Stock No.:
178-3940
Mfr. Part No.:
SIRC06DP-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

38.5 nC @ 10 V

Length

5.99mm

Width

5mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Forward Diode Voltage

0.7V

Minimum Operating Temperature

-55 °C

Height

1.07mm

RoHS Status: Not Applicable

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET
SkyFET® with monolithic Schottky diode

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