N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

RS Stock No.:: 178-3962
Mfr. Part No.:: SiS110DN-T1-GE3
Brand:: Vishay Siliconix

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

2 In stock - FREE next working day delivery available

Price Each (In a Pack of 25)

£0.421

(exc. VAT)

£0.505

(inc. VAT)

Units	Per unit	Per Pack*
25 +	£0.421	£10.525

*price indicative

RS Stock No.:: 178-3962
Mfr. Part No.:: SiS110DN-T1-GE3
Brand:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	14.2 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK 1212-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	4V
Maximum Power Dissipation	24 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Width	3.15mm
Transistor Material	Si
Length	3.15mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	8.5 nC @ 10 V
Height	1.07mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

Related links