Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212

RS Stock No.:: 178-3693
Mfr. Part No.:: SiS110DN-T1-GE3
Brand:: Vishay Siliconix

Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212

Subtotal (1 reel of 3000 units)*

£663.00

(exc. VAT)

£795.00

(inc. VAT)

FREE delivery for orders over £60.00

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Shipping from 22 October 2026

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Units	Per unit	Per Reel*
3000 +	£0.221	£663.00

*price indicative

RS Stock No.:: 178-3693
Mfr. Part No.:: SiS110DN-T1-GE3
Brand:: Vishay Siliconix

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay Siliconix
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	14.2A
	Maximum Drain Source Voltage Vds	100V
	Series	SiS110DN
	Package Type	PowerPAK 1212
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	8.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	24W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	3.15mm
	Length	3.15mm
	Height	1.07mm
	Automotive Standard	No

	Select all
	Brand Vishay Siliconix
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 14.2A
	Maximum Drain Source Voltage Vds 100V
	Series SiS110DN
	Package Type PowerPAK 1212
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 8.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 24W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 3.15mm
	Length 3.15mm
	Height 1.07mm
	Automotive Standard No

Datasheet

RoHS Status: Exempt

COO (Country of Origin):: CN

Vishay Siliconix SiS110DN Series MOSFET, 100V Drain Source Voltage, 14.2A Continuous Drain Current - SiS110DN-T1-GE3

This n-channel MOSFET is a surface-mount switching transistor designed for power conversion and control applications in industrial systems. It operates as an enhancement-mode device capable of handling moderate to high voltages and currents, providing efficient switching in Compact surface-mount assemblies.

Features and Benefits:

• 100V drain-source rating enables high-voltage switching applications • 14.2A continuous drain current supports substantial load currents • 70mΩ Rds(on) minimises conduction losses during operation • 8.5nC gate charge reduces switching energy and drive requirements • 24W power dissipation manages thermal load in confined layouts • 150°C maximum junction temperature allows elevated operating conditions

Applications

• Suitable for DC-DC converter switching stages in automation equipment • Ideal for motor-drive half-bridge circuits in factory systems • Used for power management in industrial control units • Can be used for load switching in electrical distribution modules

What mounting style does it require for assembly?

It is supplied in a Compact PowerPAK 1212 surface-mount package designed for soldered PCB assembly and low-profile board layouts.

How wide a temperature range can it tolerate in service?

It is rated for operation from -55°C ambient to a 150°C maximum junction temperature, permitting use in environments with substantial thermal variation.

What gate voltage limits should designers observe?

The device permits gate-source voltages up to 20V

designs should ensure the gate drive stays within this constraint to protect the gate oxide.

How many pins does the package present for circuit integration?

The package includes eight pins to accommodate drain, source and gate connections and to aid thermal and electrical routing on the PCB.

Is this part specified for automotive use?

It is not designated to automotive standards and should not be chosen where automotive-grade qualification is mandatory.