Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3

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Subtotal (1 reel of 3000 units)*

£723.00

(exc. VAT)

£867.00

(inc. VAT)

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  • Plus 999,996,000 unit(s) shipping from 23 April 2026
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3000 +£0.241£723.00

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RS Stock No.:
178-3667
Mfr. Part No.:
SiA106DJ-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

SC-70-6L

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

1.35mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Length

2.2mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg Figure-of-Merit (FOM)
Tuned for the lowest RDS – Qoss

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