Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3

Subtotal (1 reel of 3000 units)*

£813.00

(exc. VAT)

£975.00

(inc. VAT)

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3000 +£0.271£813.00

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RS Stock No.:
178-3667
Mfr. Part No.:
SiA106DJ-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

SC-70-6L

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

1.35mm

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Height

1mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

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