Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3
- RS Stock No.:
- 178-3901
- Mfr. Part No.:
- SiA106DJ-T1-GE3
- Brand:
- Vishay Siliconix
Subtotal (1 pack of 10 units)*
£5.91
(exc. VAT)
£7.09
(inc. VAT)
FREE delivery for orders over £50.00
- 3,000 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £0.591 | £5.91 |
50 - 90 | £0.533 | £5.33 |
100 - 490 | £0.502 | £5.02 |
500 - 990 | £0.472 | £4.72 |
1000 + | £0.414 | £4.14 |
*price indicative
- RS Stock No.:
- 178-3901
- Mfr. Part No.:
- SiA106DJ-T1-GE3
- Brand:
- Vishay Siliconix
Select all | Attribute | Value |
---|---|---|
Brand | Vishay Siliconix | |
Channel Type | N | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SC-70-6L | |
Series | TrenchFET | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 20 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 19 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 8.9 nC @ 10 V | |
Width | 1.35mm | |
Length | 2.2mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 1mm | |
Select all | ||
---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SC-70-6L | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 19 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8.9 nC @ 10 V | ||
Width 1.35mm | ||
Length 2.2mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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