Vishay Siliconix TrenchFET P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70-6L SQA405EJ-T1_GE3
- RS Stock No.:
 - 178-3711
 - Mfr. Part No.:
 - SQA405EJ-T1_GE3
 - Brand:
 - Vishay Siliconix
 
- RS Stock No.:
 - 178-3711
 - Mfr. Part No.:
 - SQA405EJ-T1_GE3
 - Brand:
 - Vishay Siliconix
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | TrenchFET | |
| Package Type | SC-70-6L | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 80 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 13.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 2.2mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.35mm | |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix  | ||
Channel Type P  | ||
Maximum Continuous Drain Current 10 A  | ||
Maximum Drain Source Voltage 40 V  | ||
Series TrenchFET  | ||
Package Type SC-70-6L  | ||
Mounting Type Surface Mount  | ||
Pin Count 6  | ||
Maximum Drain Source Resistance 80 mΩ  | ||
Channel Mode Enhancement  | ||
Maximum Gate Threshold Voltage 2.5V  | ||
Minimum Gate Threshold Voltage 1.5V  | ||
Maximum Power Dissipation 13.6 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage ±20 V  | ||
Length 2.2mm  | ||
Number of Elements per Chip 1  | ||
Transistor Material Si  | ||
Width 1.35mm  | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V  | ||
Maximum Operating Temperature +175 °C  | ||
Height 1mm  | ||
Automotive Standard AEC-Q101  | ||
Minimum Operating Temperature -55 °C  | ||
Forward Diode Voltage 1.2V  | ||
RoHS Status: Exempt
- COO (Country of Origin):
 - CN
 
Related links
- Vishay Siliconix TrenchFET P-Channel MOSFET 40 V, 6-Pin SC-70-6L SQA405EJ-T1_GE3
 - Vishay Siliconix TrenchFET P-Channel MOSFET 30 V, 6-Pin SC-70-6L SQA403EJ-T1_GE3
 - Vishay Siliconix TrenchFET P-Channel MOSFET 20 V, 6-Pin SC-70-6L SQA401EEJ-T1_GE3
 - Vishay Siliconix TrenchFET N-Channel MOSFET 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3
 - Vishay Siliconix TrenchFET P-Channel MOSFET 80 V, 4-Pin PowerPAK SO-8L SQJ481EP-T1_GE3
 - Vishay Siliconix TrenchFET P-Channel MOSFET 200 V, 4-Pin PowerPAK SO-8L SQJ431AEP-T1_GE3
 - Vishay Siliconix TrenchFET P-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJ415EP-T1_GE3
 - Vishay Siliconix TrenchFET Dual N/P-Channel MOSFET 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3
 
