Vishay Silicon N-Channel MOSFET, 8.8 A, 100 V, 7-Pin SC-70-6L SIA112LDJ-T1-GE3
- RS Stock No.:
- 279-9899
- Mfr. Part No.:
- SIA112LDJ-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£672.00
(exc. VAT)
£807.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 6,000 unit(s), ready to ship
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.224 | £672.00 |
*price indicative
- RS Stock No.:
- 279-9899
- Mfr. Part No.:
- SIA112LDJ-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.8 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SC-70-6L | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.8 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SC-70-6L | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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