Vishay Siliconix TrenchFET P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Si2319DDS-T1-GE3
- RS Stock No.:
- 178-3853P
- Mfr. Part No.:
- Si2319DDS-T1-GE3
- Brand:
- Vishay Siliconix
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£26.70
(exc. VAT)
£32.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 4,900 unit(s), ready to ship
Units | Per unit |
|---|---|
| 100 - 450 | £0.267 |
| 500 - 950 | £0.236 |
| 1000 + | £0.204 |
*price indicative
- RS Stock No.:
- 178-3853P
- Mfr. Part No.:
- Si2319DDS-T1-GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.6 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.7 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 12.5 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.04mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.6 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.7 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Transistor Material Si | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 12.5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 75mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Battery switch
• Load switch
• Motor drive control
• Load switch
• Motor drive control
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested