Vishay Siliconix TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3

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Subtotal (1 pack of 5 units)*

£13.13

(exc. VAT)

£15.755

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45£2.626£13.13
50 - 95£2.356£11.78
100 - 495£2.232£11.16
500 - 995£2.098£10.49
1000 +£1.836£9.18

*price indicative

Packaging Options:
RS Stock No.:
178-3934
Mfr. Part No.:
SiDR392DP-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8DC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

900 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V, +6 V

Length

5.99mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

125 nC @ 10 V

Width

5mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

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