N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC Vishay Siliconix SiDR392DP-T1-GE3

RS Stock No.:: 178-3934
Mfr. Part No.:: SiDR392DP-T1-GE3
Brand:: Vishay Siliconix

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC Vishay Siliconix SiDR392DP-T1-GE3

3000 In stock - FREE next working day delivery available

Price Each (In a Pack of 5)

£1.986

(exc. VAT)

£2.383

(inc. VAT)

Units	Per unit	Per Pack*
5 - 45	£1.986	£9.93
50 - 95	£1.782	£8.91
100 - 495	£1.688	£8.44
500 - 995	£1.586	£7.93
1000 +	£1.388	£6.94

*price indicative

RS Stock No.:: 178-3934
Mfr. Part No.:: SiDR392DP-T1-GE3
Brand:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK SO-8DC
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	900 μΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	+20 V, +6 V
Number of Elements per Chip	1
Width	5mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	125 nC @ 10 V
Transistor Material	Si
Length	5.99mm
Height	1.07mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC Vishay Siliconix SiDR392DP-T1-GE3

Related links