Vishay Siliconix TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3

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Subtotal (1 pack of 5 units)*

£13.13

(exc. VAT)

£15.755

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45£2.626£13.13
50 - 95£2.356£11.78
100 - 495£2.232£11.16
500 - 995£2.098£10.49
1000 +£1.836£9.18

*price indicative

Packaging Options:
RS Stock No.:
178-3934
Mfr. Part No.:
SiDR392DP-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

900μΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

125nC

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

6 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.07mm

Length

5.99mm

Width

5 mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
TW
TrenchFET® Gen IV power MOSFET

Top side cooling feature provides additional venue for thermal transfer

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

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