Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 SiSS12DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

£948.00

(exc. VAT)

£1,137.00

(inc. VAT)

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3000 +£0.316£948.00

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RS Stock No.:
178-3701
Mfr. Part No.:
SiSS12DN-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK 1212-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Typical Gate Charge @ Vgs

59 nC @ 10 V

Length

3.15mm

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

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