N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

RS Stock No.:: 178-3701
Mfr. Part No.:: SiSS12DN-T1-GE3
Brand:: Vishay Siliconix

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

Available to back order for despatch 29/08/2024

Price Each (On a Reel of 3000)

£0.366

(exc. VAT)

£0.439

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	£0.366	£1,098.00

*price indicative

RS Stock No.:: 178-3701
Mfr. Part No.:: SiSS12DN-T1-GE3
Brand:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	40 V
Series	TrenchFET
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.1V
Minimum Gate Threshold Voltage	2.4V
Maximum Power Dissipation	65.7 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	59 nC @ 10 V
Transistor Material	Si
Length	3.15mm
Number of Elements per Chip	1
Width	3.15mm
Height	1.07mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

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