N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

RS Stock No.:: 178-3920
Mfr. Part No.:: SiSS12DN-T1-GE3
Brand:: Vishay Siliconix

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

Available to back order for despatch 29/08/2024

Price Each (In a Pack of 10)

£0.698

(exc. VAT)

£0.838

(inc. VAT)

Units	Per unit	Per Pack*
10 - 90	£0.698	£6.98
100 - 490	£0.594	£5.94
500 - 990	£0.522	£5.22
1000 +	£0.455	£4.55

*price indicative

RS Stock No.:: 178-3920
Mfr. Part No.:: SiSS12DN-T1-GE3
Brand:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	40 V
Package Type	PowerPAK 1212-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.1V
Minimum Gate Threshold Voltage	2.4V
Maximum Power Dissipation	65.7 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	59 nC @ 10 V
Length	3.15mm
Width	3.15mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.07mm
Forward Diode Voltage	1.1V

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

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