Vishay TrenchFET N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8 SISA10DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

£993.00

(exc. VAT)

£1,191.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.331£993.00

*price indicative

RS Stock No.:
165-7077
Mfr. Part No.:
SISA10DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Width

3.4mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Length

3.4mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

1.12mm

Minimum Operating Temperature

-55 °C

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