Name: Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 SIRC06DP-T1-GE3
Brand: Vishay Siliconix
SKU: 178-3691
Price: 0.30 GBP
Availability: OutOfStock

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay Siliconix
	Channel Type	N
	Maximum Continuous Drain Current	60 A
	Maximum Drain Source Voltage	30 V
	Package Type	PowerPAK SO-8
	Series	TrenchFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	50 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +20 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	38.5 nC @ 10 V
	Length	5.99mm
	Width	5mm
	Number of Elements per Chip	2
	Forward Diode Voltage	0.7V
	Minimum Operating Temperature	-55 °C
	Height	1.07mm

	Select all
	Brand Vishay Siliconix
	Channel Type N
	Maximum Continuous Drain Current 60 A
	Maximum Drain Source Voltage 30 V
	Package Type PowerPAK SO-8
	Series TrenchFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 50 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +20 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 38.5 nC @ 10 V
	Length 5.99mm
	Width 5mm
	Number of Elements per Chip 2
	Forward Diode Voltage 0.7V
	Minimum Operating Temperature -55 °C
	Height 1.07mm

Datasheet

RoHS Status: Exempt

COO (Country of Origin):: CN

TrenchFET® Gen IV power MOSFET
SkyFET® with monolithic Schottky diode

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 SIRC06DP-T1-GE3

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