Vishay Siliconix TrenchFET Dual N/P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3

Brand

Vishay Siliconix

Channel Type

N, P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPak SO-8L Dual

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W, 34 W

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V

Number of Elements per Chip

2

Length

5.99mm

Width

5mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101