Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3

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Subtotal (1 pack of 25 units)*

£14.525

(exc. VAT)

£17.425

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 75£0.581£14.525
100 - 475£0.495£12.375
500 - 975£0.436£10.90
1000 +£0.378£9.45

*price indicative

Packaging Options:
RS Stock No.:
178-3851
Mfr. Part No.:
SQS966ENW-T1_GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

3.15mm

Width

3.15mm

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

6.2 nC @ 10 V

Transistor Material

Si

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1.07mm

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