Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3
- RS Stock No.:
- 178-3851
- Mfr. Part No.:
- SQS966ENW-T1_GE3
- Brand:
- Vishay Siliconix
Save 34% when you buy 1000 units
Subtotal (1 pack of 25 units)*
£14.525
(exc. VAT)
£17.425
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | £0.581 | £14.53 |
| 100 - 475 | £0.495 | £12.38 |
| 500 - 975 | £0.436 | £10.90 |
| 1000 + | £0.378 | £9.45 |
*price indicative
- RS Stock No.:
- 178-3851
- Mfr. Part No.:
- SQS966ENW-T1_GE3
- Brand:
- Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerPAK 1212-8 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 27.8 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 3.15mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Length | 3.15mm | |
| Typical Gate Charge @ Vgs | 6.2 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 1.07mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerPAK 1212-8 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 27.8 W | ||
Maximum Gate Source Voltage ±20 V | ||
Width 3.15mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Length 3.15mm | ||
Typical Gate Charge @ Vgs 6.2 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Height 1.07mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
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