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    Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SQS966ENW-T1_GE3

    View all MOSFETs
    Available to back order for despatch 05/05/2025
    Units

    Price Each (In a Pack of 25)

    £0.594

    (exc. VAT)

    £0.713

    (inc. VAT)

    Units
    Per unit
    Per Pack*
    25 - 75£0.594£14.85
    100 - 475£0.506£12.65
    500 - 975£0.446£11.15
    1000 +£0.386£9.65

    *price indicative

    Packaging Options:
    RS Stock No.:
    178-3851
    Mfr. Part No.:
    SQS966ENW-T1_GE3
    Brand:
    Vishay Siliconix

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN
    Attribute
    Value
    Channel TypeN
    Maximum Continuous Drain Current6 A
    Maximum Drain Source Voltage60 V
    SeriesTrenchFET
    Package TypePowerPAK 1212-8
    Mounting TypeSurface Mount
    Pin Count8
    Maximum Drain Source Resistance60 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage2.5V
    Minimum Gate Threshold Voltage1.5V
    Maximum Power Dissipation27.8 W
    Maximum Gate Source Voltage±20 V
    Number of Elements per Chip2
    Maximum Operating Temperature+175 °C
    Width3.15mm
    Typical Gate Charge @ Vgs6.2 nC @ 10 V
    Length3.15mm
    Transistor MaterialSi
    Height1.07mm
    Forward Diode Voltage1.1V
    Minimum Operating Temperature-55 °C
    Automotive StandardAEC-Q101

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