Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SQS944ENW-T1_GE3

RS Stock No.:: 178-3726
Mfr. Part No.:: SQS944ENW-T1_GE3
Brand:: Vishay Siliconix

Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SQS944ENW-T1_GE3

Price Each (On a Reel of 3000)

£0.253

(exc. VAT)

£0.304

(inc. VAT)

2975 In stock - FREE next working day delivery available

Units	Per unit	Per Reel*
3000 +	£0.253	£759.00

*price indicative

RS Stock No.:: 178-3726
Mfr. Part No.:: SQS944ENW-T1_GE3
Brand:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6 A
Maximum Drain Source Voltage	40 V
Series	TrenchFET
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	40 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	27.8 W
Maximum Gate Source Voltage	±20 V
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	11.5 nC @ 10 V
Transistor Material	Si
Length	3.15mm
Number of Elements per Chip	2
Width	3.15mm
Minimum Operating Temperature	-55 °C
Height	1.07mm
Forward Diode Voltage	1.1V
Automotive Standard	AEC-Q101

Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SQS944ENW-T1_GE3

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