Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 SQS944ENW-T1_GE3

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
178-3726
Mfr. Part No.:
SQS944ENW-T1_GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK 1212-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

11.5 nC @ 10 V

Transistor Material

Si

Length

3.15mm

Height

1.07mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

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