Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

16.7 W

Maximum Gate Source Voltage

-12 V, +16 V

Typical Gate Charge @ Vgs

13.5 nC @ 10 V

Length

3mm

Width

3mm

Number of Elements per Chip

2

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.75mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C