Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3

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Subtotal (1 pack of 10 units)*

£7.71

(exc. VAT)

£9.25

(inc. VAT)

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10 +£0.771£7.71

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Packaging Options:
RS Stock No.:
178-3944
Mfr. Part No.:
SiZ350DT-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAIR 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

16.7 W

Maximum Gate Source Voltage

-12 V, +16 V

Number of Elements per Chip

2

Length

3mm

Typical Gate Charge @ Vgs

13.5 nC @ 10 V

Width

3mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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