Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212

Subtotal (1 reel of 3000 units)*

£1,074.00

(exc. VAT)

£1,290.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 22 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£0.358£1,074.00

*price indicative

RS Stock No.:
178-3727
Mfr. Part No.:
SQS966ENW-T1_GE3
Brand:
Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

27.8W

Forward Voltage Vf

0.82V

Typical Gate Charge Qg @ Vgs

12.1nC

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Length

3.15mm

Height

1.07mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® power MOSFET

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy