Vishay Siliconix TrenchFET Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3
- RS Stock No.:
- 178-3893
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Brand:
- Vishay Siliconix
Subtotal (1 pack of 10 units)*
£11.33
(exc. VAT)
£13.60
(inc. VAT)
FREE delivery for orders over £50.00
- 30 left, ready to ship
- Plus 1,410 left, shipping from 11 September 2025
Units | Per unit | Per Pack* |
---|---|---|
10 - 90 | £1.133 | £11.33 |
100 - 490 | £1.098 | £10.98 |
500 - 990 | £1.07 | £10.70 |
1000 + | £1.042 | £10.42 |
*price indicative
- RS Stock No.:
- 178-3893
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Brand:
- Vishay Siliconix
Select all | Attribute | Value |
---|---|---|
Brand | Vishay Siliconix | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | PowerPak SO-8L Dual | |
Series | TrenchFET | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Maximum Drain Source Resistance | 30 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1.5V | |
Maximum Power Dissipation | 34 W, 34 W | |
Maximum Gate Source Voltage | ±20 V | |
Typical Gate Charge @ Vgs | 18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V | |
Length | 5.99mm | |
Number of Elements per Chip | 2 | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Width | 5mm | |
Automotive Standard | AEC-Q101 | |
Minimum Operating Temperature | -55 °C | |
Height | 1.07mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Vishay Siliconix | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PowerPak SO-8L Dual | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 30 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 34 W, 34 W | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V | ||
Length 5.99mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 5mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.07mm | ||
Forward Diode Voltage 1.2V | ||
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