Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A, 60 A

Maximum Drain Source Voltage

40 (Channel 1) V, 40 (Channel 2) V

Package Type

PowerPAK SO-8L Dual

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3 (Channel 1) V, 2.4 (Channel 2) V

Minimum Gate Threshold Voltage

1.3 (Channel 1) V, 1.4 (Channel 2) V

Maximum Power Dissipation

27 W, 48 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)

Length

5mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Width

4.47mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Height

1.01mm