Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3
- RS Stock No.:
- 188-4915
- Mfr. Part No.:
- SQJ208EP-T1_GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£1,407.00
(exc. VAT)
£1,689.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 13 July 2026
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.469 | £1,407.00 |
*price indicative
- RS Stock No.:
- 188-4915
- Mfr. Part No.:
- SQJ208EP-T1_GE3
- Brand:
- Vishay
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A, 60 A | |
Maximum Drain Source Voltage | 40 (Channel 1) V, 40 (Channel 2) V | |
Package Type | PowerPAK SO-8L Dual | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.3 (Channel 1) V, 2.4 (Channel 2) V | |
Minimum Gate Threshold Voltage | 1.3 (Channel 1) V, 1.4 (Channel 2) V | |
Maximum Power Dissipation | 27 W, 48 W | |
Transistor Configuration | Dual | |
Maximum Gate Source Voltage | ±20 V | |
Typical Gate Charge @ Vgs | 22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2) | |
Width | 4.47mm | |
Number of Elements per Chip | 2 | |
Length | 5mm | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 1.01mm | |
Automotive Standard | AEC-Q101 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A, 60 A | ||
Maximum Drain Source Voltage 40 (Channel 1) V, 40 (Channel 2) V | ||
Package Type PowerPAK SO-8L Dual | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3 (Channel 1) V, 2.4 (Channel 2) V | ||
Minimum Gate Threshold Voltage 1.3 (Channel 1) V, 1.4 (Channel 2) V | ||
Maximum Power Dissipation 27 W, 48 W | ||
Transistor Configuration Dual | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2) | ||
Width 4.47mm | ||
Number of Elements per Chip 2 | ||
Length 5mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.01mm | ||
Automotive Standard AEC-Q101 | ||
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