Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 850 mA, 20 V Enhancement, 6-Pin SOT-363

Subtotal (1 reel of 3000 units)*

£381.00

(exc. VAT)

£456.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 30 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£0.127£381.00

*price indicative

RS Stock No.:
188-4911
Mfr. Part No.:
SQ1922AEEH-T1_GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

850mA

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

530mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.9nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.5W

Forward Voltage Vf

0.8V

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Length

2.2mm

Height

1mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET.

TrenchFET® power MOSFET

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy