Vishay Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 SQ1922AEEH-T1_GE3

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Subtotal (1 reel of 3000 units)*

£330.00

(exc. VAT)

£390.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.11£330.00

*price indicative

RS Stock No.:
188-4911
Mfr. Part No.:
SQ1922AEEH-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

530 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

1.5 W

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 10 V

Width

1.35mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1mm

Forward Diode Voltage

1.2V

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET.

TrenchFET® power MOSFET

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