Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

RS Stock No.:: 188-5029
Mfr. Part No.:: SQ1922AEEH-T1_GE3
Brand:: Vishay

Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

Bulk discount available

Subtotal (1 pack of 25 units)**

£7.40

(exc. VAT)

£8.88

(inc. VAT)

Available to back order for despatch 13/06/2025*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over £50.00

Units	Per unit	Per Pack**
25 - 225	£0.296	£7.40
250 - 600	£0.29	£7.25
625 - 1225	£0.222	£5.55
1250 - 2475	£0.174	£4.35
2500 +	£0.133	£3.325

**price indicative

RS Stock No.:: 188-5029
Mfr. Part No.:: SQ1922AEEH-T1_GE3
Brand:: Vishay

Datasheet SQ1922AEEH-T1_GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	850 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	530 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	1.5 W
Maximum Gate Source Voltage	±12 V
Number of Elements per Chip	2
Length	2.2mm
Maximum Operating Temperature	+175 °C
Width	1.35mm
Typical Gate Charge @ Vgs	0.9 nC @ 10 V
Minimum Operating Temperature	-55 °C
Automotive Standard	AEC-Q101
Height	1mm
Forward Diode Voltage	1.2V

Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

FREE delivery for orders over £50.00

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