Vishay Siliconix TrenchFET Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3
- RS Stock No.:
- 178-3893P
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Brand:
- Vishay Siliconix
Subtotal 100 units (supplied on a reel)*. Quantities below 150 on continuous strip
£109.80
(exc. VAT)
£131.80
(inc. VAT)
FREE delivery for orders over £50.00
- 1,410 left, ready to ship
Units | Per unit |
|---|---|
| 100 - 490 | £1.098 |
| 500 - 990 | £1.07 |
| 1000 + | £1.042 |
*price indicative
- RS Stock No.:
- 178-3893P
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Brand:
- Vishay Siliconix
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PowerPak SO-8L Dual | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 30 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 34 W, 34 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Transistor Material | Si | |
| Width | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 2 | |
| Length | 5.99mm | |
| Typical Gate Charge @ Vgs | 18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V | |
| Height | 1.07mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PowerPak SO-8L Dual | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 30 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 34 W, 34 W | ||
Maximum Gate Source Voltage ±20 V | ||
Transistor Material Si | ||
Width 5mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 2 | ||
Length 5.99mm | ||
Typical Gate Charge @ Vgs 18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V | ||
Height 1.07mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||