Vishay Siliconix TrenchFET Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3

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Subtotal 100 units (supplied on a continuous strip)*

£109.80

(exc. VAT)

£131.80

(inc. VAT)

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100 - 490£1.098
500 - 990£1.07
1000 +£1.042

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Packaging Options:
RS Stock No.:
178-3893P
Mfr. Part No.:
SQJ504EP-T1_GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N, P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPak SO-8L Dual

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W, 34 W

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

5.99mm

Number of Elements per Chip

2

Width

5mm

Height

1.07mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount dual channel (both N and P-channels) MOSFET is a new age product with a drain-source voltage of 40V. It has drain-source resistance of 17mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 34W and a continuous drain current of 30A. The MOSFET has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in the automotive industry.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

Certifications


• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

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