Infineon IRFR5305PBF P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK IRFR5305TRLPBF

RS Stock No.:: 171-1909
Mfr. Part No.:: IRFR5305TRLPBF
Brand:: Infineon

Infineon IRFR5305PBF P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK IRFR5305TRLPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

£12.00

(exc. VAT)

£14.40

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,420 unit(s) ready to ship
Plus 999,998,560 unit(s) shipping from 18 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 80	£0.60	£12.00
100 - 180	£0.468	£9.36
200 - 480	£0.438	£8.76
500 - 980	£0.408	£8.16
1000 +	£0.378	£7.56

*price indicative

RS Stock No.:: 171-1909
Mfr. Part No.:: IRFR5305TRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	31 A
	Maximum Drain Source Voltage	55 V
	Package Type	DPAK (TO-252)
	Series	IRFR5305PBF
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	65 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	110 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	20 V
	Width	7.49mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	63 nC @ 10 V
	Length	6.73mm
	Number of Elements per Chip	1
	Forward Diode Voltage	1.3V
	Typical Power Gain	0
	Height	2.39mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 31 A
	Maximum Drain Source Voltage 55 V
	Package Type DPAK (TO-252)
	Series IRFR5305PBF
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 65 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 110 W
	Transistor Configuration Single
	Maximum Gate Source Voltage 20 V
	Width 7.49mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 63 nC @ 10 V
	Length 6.73mm
	Number of Elements per Chip 1
	Forward Diode Voltage 1.3V
	Typical Power Gain 0
	Height 2.39mm
	Minimum Operating Temperature -55 °C

Non Compliant

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon IRFR5305 is the 55V single P-channel HEXFET power MOSFET in a D-Pak package. The D-Pak is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.

Advanced process technology
Fast switching
Fully avalanche rated
Lead free

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon IRFR5305PBF P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK IRFR5305TRLPBF

FREE delivery for orders over £50.00

P-Channel Power MOSFET 40V to 55V, Infineon

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