Infineon IRFR5305PBF P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK IRFR5305TRLPBF
- RS Stock No.:
- 170-2262
- Mfr. Part No.:
- IRFR5305TRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£1,227.00
(exc. VAT)
£1,473.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,000 unit(s) shipping from 18 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.409 | £1,227.00 |
*price indicative
- RS Stock No.:
- 170-2262
- Mfr. Part No.:
- IRFR5305TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Series | IRFR5305PBF | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 65 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Width | 7.49mm | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Height | 2.39mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Series IRFR5305PBF | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 7.49mm | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 2.39mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Non Compliant
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon IRFR5305 is the 55V single P-channel HEXFET power MOSFET in a D-Pak package. The D-Pak is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.
Advanced process technology
Fast switching
Fully avalanche rated
Lead free
Fast switching
Fully avalanche rated
Lead free
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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