Infineon IPD068N10N3 G Type N-Channel MOSFET, 90 A, 100 V Enhancement, 5-Pin TO-252

RS Stock No.:: 170-2284
Mfr. Part No.:: IPD068N10N3GATMA1
Brand:: Infineon

Infineon IPD068N10N3 G Type N-Channel MOSFET, 90 A, 100 V Enhancement, 5-Pin TO-252

Subtotal (1 reel of 2500 units)*

£1,655.00

(exc. VAT)

£1,985.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

17,500 unit(s) ready to ship

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Units	Per unit	Per Reel*
2500 +	£0.662	£1,655.00

*price indicative

RS Stock No.:: 170-2284
Mfr. Part No.:: IPD068N10N3GATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	IPD068N10N3 G
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	12.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	150W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Width	7.47 mm
	Length	6.73mm
	Height	2.41mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series IPD068N10N3 G
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 12.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 150W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Width 7.47 mm
	Length 6.73mm
	Height 2.41mm
	Standards/Approvals No
	Automotive Standard No

RoHS Status: Not Applicable

Infineon MOSFET

The Infineon PG-TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 6.8mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 71W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Easy to design products

• Environmentally friendly

• Excellent gate charge x RDS (on) product (FOM)

• Excellent switching performance

• Halogen free

• Highest power density

• Increased efficiency

• Lead (Pb) free plating

• Less paralleling required

• Operating temperature ranges between -55°C and 175°C

• Smallest board space consumption

• Very low Qg and Qgd

• World's lowest RDS (on)

Applications

• Class D audio amplifiers

• Isolated DC-DC converters (telecom and data communication systems

• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)

• O-ring switches and circuit breakers in 48V systems

• Synchronous rectifier

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC61249-2-21

• JEDEC

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Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

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