Infineon OptiMOS™ 3 N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK IPD600N25N3GATMA1
- RS Stock No.:
- 171-1948
- Mfr. Part No.:
- IPD600N25N3GATMA1
- Brand:
- Infineon
Save 34% when you buy 250 units
Subtotal (1 pack of 10 units)*
£17.20
(exc. VAT)
£20.60
(inc. VAT)
FREE delivery for orders over £50.00
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- 8,770 unit(s) shipping from 09 October 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | £1.72 | £17.20 |
| 20 - 40 | £1.41 | £14.10 |
| 50 - 90 | £1.324 | £13.24 |
| 100 - 240 | £1.238 | £12.38 |
| 250 + | £1.135 | £11.35 |
*price indicative
- RS Stock No.:
- 171-1948
- Mfr. Part No.:
- IPD600N25N3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 250 V | |
| Series | OptiMOS™ 3 | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 136 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 7.47mm | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 250 V | ||
Series OptiMOS™ 3 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 136 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Width 7.47mm | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
The Infineon IPD600N25N3 G is 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Industries lowest R DS(on)
Lowest Q g and Q gd
Lowest Q g and Q gd
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