Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK IPD068N10N3GATMA1
- RS Stock No.:
- 171-1939
- Mfr. Part No.:
- IPD068N10N3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£7.98
(exc. VAT)
£9.58
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 17,930 unit(s) shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.798 | £7.98 |
| 100 - 240 | £0.715 | £7.15 |
| 250 - 490 | £0.696 | £6.96 |
| 500 - 990 | £0.678 | £6.78 |
| 1000 + | £0.661 | £6.61 |
*price indicative
- RS Stock No.:
- 171-1939
- Mfr. Part No.:
- IPD068N10N3GATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-252 | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Typical Gate Charge @ Vgs | 51 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 7.47mm | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-252 | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Typical Gate Charge @ Vgs 51 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 7.47mm | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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