Infineon OptiMOS™ 2 N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD25CN10NGATMA1
- RS Stock No.:
- 171-1917
- Mfr. Part No.:
- IPD25CN10NGATMA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£8.77
(exc. VAT)
£10.52
(inc. VAT)
FREE delivery for orders over £50.00
- 1,720 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 - 90 | £0.877 | £8.77 |
100 - 240 | £0.684 | £6.84 |
250 - 490 | £0.64 | £6.40 |
500 - 990 | £0.596 | £5.96 |
1000 + | £0.553 | £5.53 |
*price indicative
- RS Stock No.:
- 171-1917
- Mfr. Part No.:
- IPD25CN10NGATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 35 A | |
Maximum Drain Source Voltage | 100 V | |
Series | OptiMOS™ 2 | |
Package Type | TO-252 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 26 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 71 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 20 V | |
Length | 6.73mm | |
Width | 7.47mm | |
Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Height | 2.41mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 2 | ||
Package Type TO-252 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 26 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 71 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Length 6.73mm | ||
Width 7.47mm | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Not Applicable
Infineon OptiMOS™2 Power MOSFET Family
Infineon MOSFET
Features and Benefits
• Environmentally friendly
• Excellent gate charge x RDS (on) product (FOM)
• Excellent switching performance
• Halogen free
• Highest power density
• Increased efficiency
• Less paralleling required
• Operating temperature ranges between -55°C and 175°C
• Smallest board space consumption
• Very low Qg and Qgd
• World's lowest RDS (on)
Applications
• Isolated DC-DC converters (telecom and data communication systems
• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)
• O-ring switches and circuit breakers in 48V systems
• Synchronous rectifier
Certifications
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
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