Infineon IPD25CN10N G Type N-Channel MOSFET, 35 A, 100 V Enhancement, 5-Pin TO-252 IPD25CN10NGATMA1

RS Stock No.:: 171-1917
Mfr. Part No.:: IPD25CN10NGATMA1
Brand:: Infineon

Infineon IPD25CN10N G Type N-Channel MOSFET, 35 A, 100 V Enhancement, 5-Pin TO-252 IPD25CN10NGATMA1

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£7.22

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£8.66

(inc. VAT)

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In Stock

Plus 1,720 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
10 - 90	£0.722	£7.22
100 - 240	£0.564	£5.64
250 - 490	£0.527	£5.27
500 - 990	£0.491	£4.91
1000 +	£0.456	£4.56

*price indicative

RS Stock No.:: 171-1917
Mfr. Part No.:: IPD25CN10NGATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	100V
	Series	IPD25CN10N G
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	26mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	71W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	23nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Width	7.47 mm
	Height	2.41mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 100V
	Series IPD25CN10N G
	Package Type TO-252
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 26mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 71W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 23nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Width 7.47 mm
	Height 2.41mm
	Standards/Approvals No
	Automotive Standard No

RoHS Status: Not Applicable

Infineon MOSFET

The Infineon TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 25mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 71W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Easy to design products

• Environmentally friendly

• Excellent gate charge x RDS (on) product (FOM)

• Excellent switching performance

• Halogen free

• Highest power density

• Increased efficiency

• Less paralleling required

• Operating temperature ranges between -55°C and 175°C

• Smallest board space consumption

• Very low Qg and Qgd

• World's lowest RDS (on)

Applications

• Class D audio amplifiers

• Isolated DC-DC converters (telecom and data communication systems

• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)

• O-ring switches and circuit breakers in 48V systems

• Synchronous rectifier

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC61249-2-21

• JEDEC

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Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

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