Infineon OptiMOS™ 2 N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD25CN10NGATMA1

RS Stock No.:: 171-1917
Mfr. Part No.:: IPD25CN10NGATMA1
Brand:: Infineon

Infineon OptiMOS™ 2 N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD25CN10NGATMA1

Bulk discount available

Subtotal (1 pack of 10 units)*

£7.22

(exc. VAT)

£8.66

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 1,720 unit(s) shipping from 27 October 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	£0.722	£7.22
100 - 240	£0.564	£5.64
250 - 490	£0.527	£5.27
500 - 990	£0.491	£4.91
1000 +	£0.456	£4.56

*price indicative

RS Stock No.:: 171-1917
Mfr. Part No.:: IPD25CN10NGATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	35 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-252
	Series	OptiMOS™ 2
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	26 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	71 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	20 V
	Maximum Operating Temperature	+175 °C
	Length	6.73mm
	Typical Gate Charge @ Vgs	23 nC @ 10 V
	Number of Elements per Chip	1
	Width	7.47mm
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C
	Height	2.41mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 35 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-252
	Series OptiMOS™ 2
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 26 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 71 W
	Transistor Configuration Single
	Maximum Gate Source Voltage 20 V
	Maximum Operating Temperature +175 °C
	Length 6.73mm
	Typical Gate Charge @ Vgs 23 nC @ 10 V
	Number of Elements per Chip 1
	Width 7.47mm
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C
	Height 2.41mm

RoHS Status: Not Applicable

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

Infineon MOSFET

The Infineon TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 25mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 71W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Easy to design products
• Environmentally friendly
• Excellent gate charge x RDS (on) product (FOM)
• Excellent switching performance
• Halogen free
• Highest power density
• Increased efficiency
• Less paralleling required
• Operating temperature ranges between -55°C and 175°C
• Smallest board space consumption
• Very low Qg and Qgd
• World's lowest RDS (on)

Applications

• Class D audio amplifiers
• Isolated DC-DC converters (telecom and data communication systems
• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)
• O-ring switches and circuit breakers in 48V systems
• Synchronous rectifier

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.