Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1

RS Stock No.:: 171-1937
Mfr. Part No.:: IPD053N08N3GATMA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1

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£9.89

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£11.87

(inc. VAT)

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Units	Per unit	Per Pack*
10 +	£0.989	£9.89

*price indicative

RS Stock No.:: 171-1937
Mfr. Part No.:: IPD053N08N3GATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	90 A
	Maximum Drain Source Voltage	80 V
	Series	OptiMOS™ 3
	Package Type	TO-252
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	9.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	150 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	20 V
	Number of Elements per Chip	1
	Length	6.73mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	52 nC @ 10 V
	Width	7.36mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V
	Height	2.41mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 90 A
	Maximum Drain Source Voltage 80 V
	Series OptiMOS™ 3
	Package Type TO-252
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 9.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 150 W
	Transistor Configuration Single
	Maximum Gate Source Voltage 20 V
	Number of Elements per Chip 1
	Length 6.73mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 52 nC @ 10 V
	Width 7.36mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V
	Height 2.41mm

IPD053N08N3 Datasheet

RoHS Status: Not Applicable

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

Infineon MOSFET

The Infineon TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 5.3mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 80V. It has a maximum power dissipation of 150W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET tackles the most challenging applications giving full flexibility in limited spaces. It is designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Dual sided cooling
• Excellent gate charge x RDS (ON) product (FOM)
• Lead (Pb) free plating
• Low parasitic inductance
• Low profile (<0, 7mm)
• Operating temperature ranges between -55°C and 175°C
• Optimized technology for DC-DC converters
• Superior thermal resistance

Applications

• AC-DC
• Adapter
• DC-DC
• LED
• Motor control
• PC power
• Server power supplies
• SMPS
• Solar
• Telecommunication

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.