Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1
- RS Stock No.:
- 170-2283
- Mfr. Part No.:
- IPD053N08N3GATMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£2,117.50
(exc. VAT)
£2,540.00
(inc. VAT)
FREE delivery for orders over £50.00
- 7,500 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.847 | £2,117.50 |
*price indicative
- RS Stock No.:
- 170-2283
- Mfr. Part No.:
- IPD053N08N3GATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 90 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | DPAK (TO-252) | |
Series | OptiMOS™ 3 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 9.5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 20 V | |
Number of Elements per Chip | 1 | |
Length | 6.73mm | |
Typical Gate Charge @ Vgs | 52 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Width | 7.36mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 2.41mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 52 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 7.36mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.41mm | ||
RoHS Status: Not Applicable
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Infineon MOSFET
Features and Benefits
• Excellent gate charge x RDS (ON) product (FOM)
• Lead (Pb) free plating
• Low parasitic inductance
• Low profile (<0, 7mm)
• Operating temperature ranges between -55°C and 175°C
• Optimized technology for DC-DC converters
• Superior thermal resistance
Applications
• Adapter
• DC-DC
• LED
• Motor control
• PC power
• Server power supplies
• SMPS
• Solar
• Telecommunication
Certifications
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
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