Infineon OptiMOS™ 2 N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD25CN10NGATMA1
- RS Stock No.:
- 170-2266
- Mfr. Part No.:
- IPD25CN10NGATMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£812.50
(exc. VAT)
£975.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 09 March 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.325 | £812.50 |
*price indicative
- RS Stock No.:
- 170-2266
- Mfr. Part No.:
- IPD25CN10NGATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Series | OptiMOS™ 2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 26 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 71 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Width | 7.47mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS™ 2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 26 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 71 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Width 7.47mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Length 6.73mm | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Not Applicable
Infineon OptiMOS™2 Power MOSFET Family
Infineon MOSFET
Features and Benefits
• Environmentally friendly
• Excellent gate charge x RDS (on) product (FOM)
• Excellent switching performance
• Halogen free
• Highest power density
• Increased efficiency
• Less paralleling required
• Operating temperature ranges between -55°C and 175°C
• Smallest board space consumption
• Very low Qg and Qgd
• World's lowest RDS (on)
Applications
• Isolated DC-DC converters (telecom and data communication systems
• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)
• O-ring switches and circuit breakers in 48V systems
• Synchronous rectifier
Certifications
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
Related links
- Infineon OptiMOS™ 2 N-Channel MOSFET 100 V, 3-Pin DPAK IPD25CN10NGATMA1
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK AUIRFR540ZTRL
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK AUIRFR540Z
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR540ZTRPBF
- Infineon OptiMOS™-T N-Channel MOSFET 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1
- STMicroelectronics STripFET N-Channel MOSFET 60 V, 3-Pin DPAK STD35NF06T4
- STMicroelectronics STripFET N-Channel MOSFET 60 V, 3-Pin DPAK STD30NF06LT4
- STMicroelectronics STripFET II N-Channel MOSFET 60 V, 3-Pin DPAK STD35NF06LT4


