Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK IPD200N15N3GATMA1
- RS Stock No.:
- 171-1945
- Mfr. Part No.:
- IPD200N15N3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£13.80
(exc. VAT)
£16.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 20 unit(s) ready to ship
- Plus 900 unit(s) shipping from 11 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | £1.38 | £13.80 |
| 20 - 40 | £1.104 | £11.04 |
| 50 - 90 | £1.035 | £10.35 |
| 100 - 240 | £0.966 | £9.66 |
| 250 + | £0.933 | £9.33 |
*price indicative
- RS Stock No.:
- 171-1945
- Mfr. Part No.:
- IPD200N15N3GATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | DPAK (TO-252) | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 9.45mm | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Length | 10.36mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.57mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 9.45mm | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Length 10.36mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.57mm | ||
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