Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK IPD200N15N3GATMA1
- RS Stock No.:
- 171-1945
- Mfr. Part No.:
- IPD200N15N3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£13.80
(exc. VAT)
£16.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 70 unit(s) ready to ship
- Plus 410 unit(s) shipping from 20 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | £1.38 | £13.80 |
| 20 - 40 | £1.104 | £11.04 |
| 50 - 90 | £1.035 | £10.35 |
| 100 - 240 | £0.966 | £9.66 |
| 250 + | £0.933 | £9.33 |
*price indicative
- RS Stock No.:
- 171-1945
- Mfr. Part No.:
- IPD200N15N3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | OptiMOS™ 3 | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Length | 10.36mm | |
| Number of Elements per Chip | 1 | |
| Width | 9.45mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 4.57mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 150 V | ||
Series OptiMOS™ 3 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Width 9.45mm | ||
Maximum Operating Temperature +175 °C | ||
Height 4.57mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
The Infineon IPD200N15N3 G is 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part.
Excellent switching performance
Worlds lowest R DS(on)
Worlds lowest R DS(on)
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