Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK IPD200N15N3GATMA1

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Subtotal (1 pack of 10 units)*

£13.80

(exc. VAT)

£16.60

(inc. VAT)

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  • 80 unit(s) ready to ship
  • Plus 410 unit(s) shipping from 09 October 2025
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Units
Per unit
Per Pack*
10 - 10£1.38£13.80
20 - 40£1.104£11.04
50 - 90£1.035£10.35
100 - 240£0.966£9.66
250 +£0.933£9.33

*price indicative

Packaging Options:
RS Stock No.:
171-1945
Mfr. Part No.:
IPD200N15N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Package Type

DPAK (TO-252)

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

9.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

23 nC @ 10 V

Length

10.36mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

The Infineon IPD200N15N3 G is 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part.

Excellent switching performance
Worlds lowest R DS(on)

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