Infineon OptiMOS™ 3 N-Channel MOSFET, 25 A, 250 V, 8-Pin TDSON BSC600N25NS3GATMA1
- RS Stock No.:
- 178-7486
- Mfr. Part No.:
- BSC600N25NS3GATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£6,100.00
(exc. VAT)
£7,300.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 18 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £1.22 | £6,100.00 |
*price indicative
- RS Stock No.:
- 178-7486
- Mfr. Part No.:
- BSC600N25NS3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 250 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.1mm | |
| Width | 5.35mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 250 V | ||
Series OptiMOS™ 3 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 6.1mm | ||
Width 5.35mm | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Exempt
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 250 V, 8-Pin TDSON BSC600N25NS3GATMA1
- Infineon OptiMOS™ N-Channel MOSFET 25 V, 8-Pin TDSON BSC010NE2LSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1
- onsemi UltraFET N-Channel MOSFET 250 V, 8-Pin SOIC FDS2734
- onsemi N-Channel MOSFET 60 V, 8-Pin LFPAK8 NTMJS1D6N06CLTWG
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin TDSON ISC030N10NM6ATMA1
- onsemi UltraFET N-Channel MOSFET 250 V, 8-Pin PQFN8 FDMS2734
- Vishay N-Channel MOSFET 250 V, 8-Pin PowerPAK SO-8 SIR692DP-T1-RE3