Infineon OptiMOS™ 3 N-Channel MOSFET, 49 A, 40 V, 8-Pin TDSON BSC093N04LSGATMA1
- RS Stock No.:
- 911-4858
- Mfr. Part No.:
- BSC093N04LSGATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£960.00
(exc. VAT)
£1,150.00
(inc. VAT)
FREE delivery for orders over £50.00
- 25,000 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
5000 + | £0.192 | £960.00 |
*price indicative
- RS Stock No.:
- 911-4858
- Mfr. Part No.:
- BSC093N04LSGATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 49 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | TDSON | |
Series | OptiMOS™ 3 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 13.7 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 8.6 nC @ 4.5 V | |
Number of Elements per Chip | 1 | |
Length | 6.35mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Width | 5.35mm | |
Minimum Operating Temperature | -55 °C | |
Height | 1.1mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 49 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TDSON | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 8.6 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Length 6.35mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 5.35mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS™3 Power MOSFETs, up to 40V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Infineon OptiMOS™ 3 Series MOSFET, 49A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - BSC093N04LSGATMA1
Features & Benefits
• Operates effectively in a voltage range of 40V
• Low drain-source resistance improves performance
• Supports surface mount design for easier integration
• High thermal stability with a maximum temperature rating of +150°C
• Suitable for diverse applications due to a wide gate threshold voltage range
Applications
• Utilised in electric vehicle charging systems
• Suitable for power supply and conversion tasks
• Applied in motor control circuits and drives
• Used in telecommunications for efficient signal management
What type of load can this device handle effectively?
Is it compatible with surface mount technology?
What are the gate voltage limitations for this component?
Can it operate in extreme temperature conditions?
How does the low Rds(on) benefit power applications?
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