Infineon OptiMOS™ 3 N-Channel MOSFET, 15.2 A, 200 V, 8-Pin TDSON BSC900N20NS3GATMA1

Subtotal (1 reel of 5000 units)*

£2,625.00

(exc. VAT)

£3,150.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +£0.525£2,625.00

*price indicative

RS Stock No.:
178-7500
Mfr. Part No.:
BSC900N20NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

15.2 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

9 nC @ 10 V

Width

5.35mm

Length

6.1mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.1mm

RoHS Status: Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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