N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC047N08NS3GATMA1

RS Stock No.:: 178-7494
Mfr. Part No.:: BSC047N08NS3GATMA1
Brand:: Infineon

N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC047N08NS3GATMA1

Available to back order for despatch 21/05/2024

Price Each (On a Reel of 5000)

£1.195

(exc. VAT)

£1.434

(inc. VAT)

Units	Per unit	Per Reel*
5000 +	£1.195	£5,975.00
*price indicative

RS Stock No.:: 178-7494
Mfr. Part No.:: BSC047N08NS3GATMA1
Brand:: Infineon

BSC047N08NS3G OptiMOS 3 Power-Transistor

RS Stock No.:: 178-7494
Mfr. Part No.:: BSC047N08NS3GATMA1
Brand:: Infineon

BSC047N08NS3G OptiMOS 3 Power-Transistor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	80 V
Series	OptiMOS 3
Package Type	TDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	8.9 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.1mm
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	52 nC @ 10 V
Width	5.35mm
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1.2V
Height	1.1mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	80 V
Series	OptiMOS 3
Package Type	TDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	8.9 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.1mm
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	52 nC @ 10 V
Width	5.35mm
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1.2V
Height	1.1mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC047N08NS3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

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