N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC020N03LSGATMA1

RS Stock No.:: 133-9901
Mfr. Part No.:: BSC020N03LSGATMA1
Brand:: Infineon

N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC020N03LSGATMA1

5 In stock - FREE next working day delivery available

Price Each (In a Pack of 5)

£0.752

(exc. VAT)

£0.902

(inc. VAT)

Units	Per unit	Per Pack*
5 - 45	£0.752	£3.76
50 - 120	£0.67	£3.35
125 - 245	£0.632	£3.16
250 - 495	£0.586	£2.93
500 +	£0.542	£2.71

*price indicative

RS Stock No.:: 133-9901
Mfr. Part No.:: BSC020N03LSGATMA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

Product Details

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	30 V
Series	OptiMOS™ 3
Package Type	TDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	2.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	96 W
Transistor Configuration	Single
Maximum Gate Source Voltage	+20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	6.35mm
Length	5.35mm
Typical Gate Charge @ Vgs	34 nC @ 4.5 V
Height	1.1mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C